Title:
HEAT TREATING FURNACE FOR SEMICONDUCTOR WAFERS
Document Type and Number:
Japanese Patent JP3260245
Kind Code:
B2
Abstract:
PURPOSE: To obtain a high-purity semiconductor wafer having improved characteristics and reliability by preventing the wafer from being contaminated with metals.
CONSTITUTION: This heat treating furnace for semiconductor wafers comprises a quartz glass-made core tube 1, a gas feed pipe 2 for feeding a heat treating gas into the core tube, and a heater 4 disposed on the outside of the tube 1. An electrode 7 is mounted in the tube 1 and positive voltage is applied to the electrode to prevent metal impurities from depositing. This is a basic structure.
Inventors:
Koichi Shiraishi
Haruo Murayama
Kenji Takahashi
Haruo Murayama
Kenji Takahashi
Application Number:
JP20807794A
Publication Date:
February 25, 2002
Filing Date:
August 09, 1994
Export Citation:
Assignee:
Toshiba Ceramics Co., Ltd.
International Classes:
H01L21/22; H01L21/205; H01L21/31; (IPC1-7): H01L21/22; H01L21/205; H01L21/31
Domestic Patent References:
| JP4277628A |
Attorney, Agent or Firm:
Shigeru Kinoshita