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Title:
HEAT TREATMENT FURNACE
Document Type and Number:
Japanese Patent JP2012015501
Kind Code:
A
Abstract:

To improve productivity by reducing standby time between respective batches during continuous heat treatment of a semiconductor, and to reduce running cost of heat treatment process by employing a furnace core tube having a simple cylindrical structure thereby reducing the frequency of damage to a gas introduction pipe part.

A heat treatment furnace for use in the heat treatment process of a semiconductor substrate comprises a cylindrical furnace core tube which has openings large enough for insertion and ejection of the semiconductor substrate in the end faces on both sides.


Inventors:
MURAKAMI TAKASHI
WATABE TAKENORI
OTSUKA HIROYUKI
Application Number:
JP2011124713A
Publication Date:
January 19, 2012
Filing Date:
June 03, 2011
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO
International Classes:
H01L21/22; F27B5/04; F27D7/06; H01L21/31; H01L21/324
Domestic Patent References:
JPS54156470A1979-12-10
JPH04364028A1992-12-16
JPS58154227A1983-09-13
JPS6430234A1989-02-01
JPS63213925A1988-09-06
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa



 
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