HEAT TREATMENT METHOD AND APPARATUS FOR WAFER

Title:

HEAT TREATMENT METHOD AND APPARATUS FOR WAFER

Document Type and Number:

Japanese Patent JP3498004

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To improve yield in manufacturing of a semiconductor device by improving uniformity in sheet resistance and distribution of a film thickness in the plane of a wafer.
SOLUTION: A heat treatment apparatus includes a furnace tube 1, a heater 2 provided around the furnace tube 1, a wafer-holding member provided in the furnace tube 1, and a gas feeding tube 4 for feeding a gas to the inside of the furnace tube 1. The gas-feeding tube 4 has a screw-shaped structure in the furnace tube 1, and its spouting opening has a fork-shaped structure. One 6b of the spouting openings is located at the center of the furnace tube 1, while the other opening 6a is located at a position lower than the center of the furnace tube 1.

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Inventors:

Teruo Arita
Koichi Takeuchi

Application Number:

JP11748299A

Publication Date:

February 16, 2004

Filing Date:

April 26, 1999

Export Citation:

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