Title:
熱処理方法および熱処理装置
Document Type and Number:
Japanese Patent JP7294802
Kind Code:
B2
Abstract:
To provide a heat treatment method and a heat treatment apparatus capable of accurately detecting an abnormal substrate.SOLUTION: A carrier containing a plurality of semiconductor wafers forming a lot is carried into a heat treatment apparatus. An expected reflectance for each of the plurality of semiconductor wafers contained in the carrier is input. Next, the reflectance of each of the semiconductor wafers is measured. The actually measured reflectance of the semiconductor wafer is compared with the expected reflectance, and when the actually measured reflectance is out of an allowable range of the expected reflectance, the semiconductor wafer is not normal and an alarm is issued. An abnormal semiconductor wafer can be accurately detected, and erroneous processing on such an abnormal semiconductor wafer can be prevented in advance.SELECTED DRAWING: Figure 11
Inventors:
Tomohiro Ueno
Katsuichi Akiyoshi
Katsuichi Akiyoshi
Application Number:
JP2018232317A
Publication Date:
June 20, 2023
Filing Date:
December 12, 2018
Export Citation:
Assignee:
Screen Holdings Co., Ltd.
International Classes:
H01L21/26; H01L21/265
Domestic Patent References:
| JP2000252227A | ||||
| JP2007013047A | ||||
| JP2011009679A | ||||
| JP2009231652A | ||||
| JP2015130423A | ||||
| JP2010238767A |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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