Title:
熱処理方法
Document Type and Number:
Japanese Patent JP4282204
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To measure the temperature distribution of a thin film on a substrate to be treated, at a high accuracy using a plurality of simple-structured radiation thermometers, and to perform a heating processing at a high accuracy. SOLUTION: The heat treatment method of heat treating a substrate 1 with a mask blank covered with a resist, comprises measuring the emissivity and the temperature of a surface under measurement in the plane, using a first radiation thermometer 9 capable of measuring the emissivity and the temperature of a surface under measurement in the plane, measuring the temperatures at a plurality of points on the substrate 1 surface, based on the obtained values of emissivity, using a plurality of second radiation thermometers 10, to obtain the offset values and gain values of the second radiation thermometers 10 from the temperatures obtained by the first and second radiation thermometers 9, 10, and controlling the output of a halogen lamp 2, while measuring the in-plane temperature distribution of the substrate surface, using the second radiation thermometers 10 with the corrected offset values and gain values.
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Inventors:
Hideaki Sakurai
Shinichi Ito
Shinichi Ito
Application Number:
JP2000087544A
Publication Date:
June 17, 2009
Filing Date:
March 27, 2000
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G01J5/00; H01L21/26; G01J5/02; G01J5/10; H01L21/027; H01L21/66
Domestic Patent References:
JP5013355A | ||||
JP6224206A | ||||
JP6204143A | ||||
JP9166494A | ||||
JP2000058423A | ||||
JP5264357A | ||||
JP61210922A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai