Title:
HEAT TREATMENT OF ZNSE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH03193700
Kind Code:
A
Abstract:
PURPOSE:To lower the resistance of the ZnSe bulk single crystal to be utilized for photoelectronic devices by subjecting the ZnSe single crystal to a heating treatment in an atmosphere contg. the vapor of Zn or Se. CONSTITUTION:The heating treatment at the time of subjecting the ZnSe single crystal to the heating treatment is executed in the atmosphere contg. the vapor of the Zn and/or Se. Particularly the method for adding the Zn into a hermetic chamber at 0.3 to 1.0g/cm<3> with respect to the actual volume (the vessel volume excluding the volume of the single crystal) in the vessel and executing the heating treatment at >=1000 deg.C is preferable, as the treatment is completed by the adequate time, although this method relates to the thickness of the crystal to be treated, the treating time and the treating temp. The bulk crystal after the crystal growth has the high resistance as the Zn holes and donor impurities form composite defects. The coefft. of diffusion in the Zn or Se in the vapor treatment is to be determined and the treatment conditions are to be set in order to find the conditions to lower the resistance by the diffusion of the Zn or Se from the vapor phase.
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Inventors:
UEDA KAZUHIRO
Application Number:
JP33195589A
Publication Date:
August 23, 1991
Filing Date:
December 21, 1989
Export Citation:
Assignee:
NIPPON SHEET GLASS CO LTD
International Classes:
C30B29/48; C30B33/02; (IPC1-7): C30B29/48; C30B33/02
Attorney, Agent or Firm:
Ohno Seiichi