To provide a heating apparatus which can radiate uniform thermal energy to substrates from a heating surface without a particular apparatus and control.
A heating plate 74 is formed of a first heating part 31, a second heating part 32, and a third heating part 33. Surface areas of the first heating part 31, second heating part 32, and third heating part 33 are almost identical. Moreover, heat generating bodies 38a, 38b, and 38c of the first, second, and third heating parts 31, 32, and 33 generate almost identical thermal energy when identical voltages are applied thereto. Therefore, uniform thermal energy can be applied to a semiconductor wafer W from a ceiling plate 37a of the heating plate 74 via a suscepter 73 to uniformly heat the semiconductor wafer W.
Yoshitake Hidetoshi
Takahiro Arita
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