PURPOSE: To make the in-substrate temperature uniform by a method wherein a heating mechanism is composed of a susceptor, with which a plurality of substrates can be retained, and a heater-provided plate with which the substrates are individually heated by bringing the plate into contact with the substrates.

CONSTITUTION: A heater-provided plate 2 consists of a plate on which a heater is coated. As each substrate 1 is heated by the heater-provided plate 2, the temperature difference between substrates is small, the uniformity of temperature in the substrate is improved, and uniform characteristics to each substrate can be obtained. Also, the films and the like deposited on a susceptor are removed using the heater 6 provided on the lower part of the susceptor 3. As a result, the in-plane distribution of the characteristics (film thickness, concentration, mobilityet, etc.) pertaining to semiconductor crystal can be made uniform.