HETERO-JUNCTION BIPOLAR TRANSISTOR AND ITS PRODUCTION

Title:

HETERO-JUNCTION BIPOLAR TRANSISTOR AND ITS PRODUCTION

Document Type and Number:

Japanese Patent JPH0669222

Kind Code:

A

Abstract:

PURPOSE: To increase the field intensity in a base layer inner electric field by giving a gradient impurity concentration to the base layer.

CONSTITUTION: A base layer 4 is constituted of 100nm thick Inx(AlyGa1-y)1-xAs(0≤x<1, 0≤y≤1). The composition rate (x) of InAs is almost linearly reduced from 0.1 at an interface with an n-GaAs collector layer 3 to zero at an interface with an n-Al GaAs emitter layer 5 as the band gap of the base layer 4 continuously increases from the collector layer interface to the emitter layer interface. Base layer inner the electric field generated in the base layer by the band gap inclination is emphasized by the gradient impurity concentration and the electric field is increased. Thus, the transit time of electrons through the base is shortened and a high performance HBT is provided.

Inventors:

MATSUNO TOSHINOBU
NAKAGAWA ATSUSHI
HIROSE TAKASHI
INOUE KAORU

Application Number:

JP21764192A

Publication Date:

March 11, 1994

Filing Date:

August 17, 1992

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L29/205; H01L21/331; H01L29/10; H01L29/73; H01L29/737; (IPC1-7): H01L21/331; H01L29/205; H01L29/73

Attorney, Agent or Firm:

Hiroshi Maeda (2 outside)

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