Title:
HETERO JUNCTION DIODE AND RADIATION DETECTOR USING THE SAME
Document Type and Number:
Japanese Patent JPH04208575
Kind Code:
A
Abstract:
PURPOSE:To obtain a hetero junction diode having a low dark current and high performance by forming the diode of a gallium arsenide crystalline substrate, and an amorphous semiconductor film formed on the substrate. CONSTITUTION:An amorphous silicon carbide film is formed as an amorphous semiconductor film 2 for forming a hetero junction on the entire upper surface of a gallium arsenide crystalline substrate 1 having 10<8>OMEGA.cm of InCr-doped specific resistance and no dislocation by a parallel flat plate type plasma CVD device. Since a hetero junction diode is formed of a hetero junction composed of the substrate 1 and the film 2 formed on the substrate, the film 2 is uniformly formed on the substrate, the film can be deposited without generating a defect in the substrate. Thus, the diode having a low dark current can be stably manufactured by a mass production.
Inventors:
MITO YOSHIO
Application Number:
JP40012290A
Publication Date:
July 30, 1992
Filing Date:
December 03, 1990
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G01T1/24; H01L29/861; H01L31/09; (IPC1-7): G01T1/24; H01L29/91; H01L31/09
Domestic Patent References:
| JPH0287682A | 1990-03-28 | |||
| JPH02260466A | 1990-10-23 |
Attorney, Agent or Firm:
Tomoyuki Takimoto (1 person outside)