Title:
HETERO-STRUCTURE AVALANCHE-PHOTODIODE WITH BUFFER LAYER
Document Type and Number:
Japanese Patent JPS59151475
Kind Code:
A
Abstract:
PURPOSE:To give high-speed response property as well as low dark currents and a high multiplication factor by introducing an InGaAsP buffer layer between an InGaAs optical absorption layer and an InP multiplication layer. CONSTITUTION:An N type In0.53Ga0.47As optical absorption layer 22, an InGaAsP buffer layer 23, an InGaAsP buffer layer 24 and an N type InP multiplication layer 25 are grown on an N<+> type InP substrate 21, thus forming an avalanche- photodiode. In the photodiode, incident beams are absorbed by the layer 22, and electron-hole pairs are generated, but holes in the pairs are injected to the layer 25 through hetero interfaces 29, 28, 27. When the forbidden band width Eg of the layers 23, 24 is each made to be 0.85eV and 1.0eV, Eg of InP and In0.23Ga0.47As is each 1.35eV and 0.75eV. Consequently, the magnitude of barriers in the interfaces 27-29 is each 0.1eV, 0.15eV and 0.35eV, and the probability of which holes are accumulated in each barrier is reduced. Accordingly, the titled photodiode can display practically sufficient high-speed response property.
Inventors:
MATSUSHIMA HIROICHI
SAKAI KAZUO
AKIBA SHIGEYUKI
KUSHIRO YUKITOSHI
NODA YUKIO
UKOU KATSUYUKI
SAKAI KAZUO
AKIBA SHIGEYUKI
KUSHIRO YUKITOSHI
NODA YUKIO
UKOU KATSUYUKI
Application Number:
JP2512883A
Publication Date:
August 29, 1984
Filing Date:
February 17, 1983
Export Citation:
Assignee:
KOKUSAI DENSHIN DENWA CO LTD
International Classes:
H01L31/107; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Otsuka Manabu