Title:
Heteroacene derivatives, organic semiconductor layers, and organic thin film transistors
Document Type and Number:
Japanese Patent JP6295781
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a novel heteroacene derivative which is a coating type organic semiconductor material having high carrier mobility, high thermostability and high solubility, and an organic semiconductor layer and an organic thin film transistor using the same.SOLUTION: There is provided a heteroacene derivative represented by the following general formula (1). (1), where Rrepresents a hydrocarbon group having 1 to 20 carbon atoms, Rto Rrepresent each independently a hydrogen atom or a hydrocarbon group containing 1 to 20 carbon atoms, Rand Rrepresent each independently a hydrogen atom, a hydrocarbon group having 1 to 20 carbon atoms or a hydrocarbon group having 1 to 20 carbon atoms and containing silicon, Tto Trepresent each independently a sulfur atom or an oxygen atom, X represent each independently an oxygen atom or a sulfur atom, n represents any integer of 1 to 20, l represents any integer of 2 to 10, m in each section of l represents any integer of 1 to 10 and m represents same or different integer in each section of l.
Inventors:
Hitoshi Hachiya
Ko Ueno
Masato Watanabe
Satoshi Hamura
Ko Ueno
Masato Watanabe
Satoshi Hamura
Application Number:
JP2014070464A
Publication Date:
March 20, 2018
Filing Date:
March 28, 2014
Export Citation:
Assignee:
Tosoh Corporation
International Classes:
C07D493/22; C07D495/22; H01L29/786; H01L51/05; H01L51/30; H01L51/40
Domestic Patent References:
| JP2012209329A | ||||
| JP2012023334A | ||||
| JP2009212182A | ||||
| JP2011526588A |
Foreign References:
| WO2008047896A1 |
Other References:
Chen, Jihua et al.,Thermal and mechanical cracking in Bis(triisopropylsilylethnyl) pentacene thin films,Journal of Polymer Science: Part B: Polymer Physics,2006年,vol.44 no.24,pp.3631-3641