Title:
ヘテロ原子含有ダイヤモンドイドトランジスタ
Document Type and Number:
Japanese Patent JP2005533128
Kind Code:
A
Abstract:
These heterodiamondoids are diamondoids that include heteroatoms in the diamond lattice structure. The heteroatoms may be either electron donating, such that an n-type heterodiamondoid is created, or electron withdrawing, such that a p-type heterodiamondoid is made. Bulk materials may be fabricated from these heterodiamondoids, and the techniques involved include chemical vapor deposition, polymerization, and crystal aggregation. Junctions may be made from the p-type and n-type heterodiamondoid based materials, and microelectronic devices may be made that utilize these junctions. The devices include diodes, bipolar junction transistors, and field effect transistors.
Inventors:
Liu, Shon Gao
Dar, Jeremy, Yi.
Carlson, Robert, M.
Dar, Jeremy, Yi.
Carlson, Robert, M.
Application Number:
JP2004523163A
Publication Date:
November 04, 2005
Filing Date:
July 17, 2003
Export Citation:
Assignee:
Chevron U.S.A. Inc.
International Classes:
C07D487/10; C07C33/34; C07C35/44; C07C49/423; C07C61/29; C07C69/03; C07C251/44; C07D451/14; C07D471/22; C07D519/00; C07F5/02; H01L21/04; H01L21/331; H01L21/337; H01L29/66; H01L29/732; H01L29/78; H01L29/808; H01L29/861; H01L51/00; H01L51/05; H01L51/30; (IPC1-7): C07C49/423; C07C33/34; C07C35/44; C07C61/29; C07C69/03; C07C251/44; C07D487/10; H01L21/331; H01L21/337; H01L29/66; H01L29/732; H01L29/78; H01L29/808; H01L29/861
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura
Katsunori Ando
Yukihiro Ikeda
Hajime Asamura
Katsunori Ando
Yukihiro Ikeda