Title:
高誘電キャパシタ誘電体を含む半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP4671207
Kind Code:
B2
Abstract:
A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of lower electrodes formed on top of the conductive plugs, Ta2O5 films formed on the lower electrodes, composite films formed on the Ta2O5 films and upper electrodes formed on the composite films.
Inventors:
Kim Satoshi
Hayashi Sun
Hayashi Sun
Application Number:
JP2000391015A
Publication Date:
April 13, 2011
Filing Date:
December 22, 2000
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
H01L21/316; H01L27/108; H01L21/02; H01L21/8242
Domestic Patent References:
| JP6077402A | ||||
| JP5110024A | ||||
| JP11233726A | ||||
| JP10229080A | ||||
| JP11204757A | ||||
| JP61156865A | ||||
| JP11054718A | ||||
| JP11074478A | ||||
| JP7066369A | ||||
| JP9051074A | ||||
| JP7263573A | ||||
| JP7263574A | ||||
| JP3157965A |
Foreign References:
| WO1999064645A1 | ||||
| WO1999010558A1 |
Attorney, Agent or Firm:
Kyosei International Patent Office