Title:
HIGH BREAKDOWN-STRENGTH SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3293871
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor element, in which sufficiently high breakdown-strength characteristics are obtained by using a thin high-resistance semiconductor layer.
CONSTITUTION: An n+ type layer 6 is formed at the central section of a high- resistance silicon layer 4 by using the high-resistance silicon layer 4 isolated from a silicon substrate 1 by an oxide film 2 and isolated by an oxide film 3 even in the lateral direction, and p+ type layers 7 are formed to peripheral sections, thus constituting a diode. The film thickness of the oxide film 2 is thickened to 1μm or more, the backward bias voltage of an element is shared largely by the oxide film 2, and an electric field in the high-resistance silicon layer 4 depending upon an electric field in the oxide film 2 is weakened, thus acquiring sufficiently high breakdown-strength characteristics even when the high-resistance silicon layer 4 is thin.
Inventors:
Akio Nakagawa
Norio Yasuhara
Tomoko Sueshiro
Norio Yasuhara
Tomoko Sueshiro
Application Number:
JP4068292A
Publication Date:
June 17, 2002
Filing Date:
January 31, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/12; H01L21/336; H01L29/40; H01L29/786; H01L29/861; (IPC1-7): H01L29/861; H01L27/12; H01L29/786
Attorney, Agent or Firm:
Takehiko Suzue