To stably and inexpensively provide a high concentration tin oxide ITO (Indium Tin Oxide) target whose density is increased, and capable of obtaining an ITO film in which a stable film deposition rate can be obtained on film deposition, and which is reduced in abnormal discharge, and is thus reduced in defects.

Indium oxide powder having a specific surface area value of 3 to 15m2/g and a mean particle diameter of ≤0.5μm and tin oxide powder having a specific surface area value of 10 to 15m2/g and a mean particle diameter of ≤1.5μm, preferably ≤1μm are mixed/and pulverized so that the content of the tin oxide is controlled to >20 to 50mass% to obtain raw material powder. Thereafter, compacting is performed under a pressure of ≥98MPa, and the resultant compact is sintered at 1,400 to 1,600°C in a no-pressure oxygen atmosphere, so that the high concentration tin oxide ITO target having a mean density of ≥7.0g/cm3 is obtained.