Title:
アバランシェを阻止できる大電流MOSデバイスおよび動作方法。
Document Type and Number:
Japanese Patent JP2007535813
Kind Code:
A
Abstract:
Particularly in high current applications, impact ionization induced electron-hole pairs are generated in the drain of an MOS transistor that can cause a parasitic bipolar transistor to become destructively conductive. The holes pass through the body region of the MOS transistor, which has intrinsic resistance, to the source, which is typically held at a relatively low voltage, such as ground. The hole current causes a voltage to develop in the body region, which acts as the base. This increased base voltage is what can cause the parasitic bipolar transistor to become conductive. The likelihood of this is greatly reduced by developing a voltage between the source, which acts as the emitter, and the body region by passing the channel current through an impedance between the source and the body region. This causes the emitter voltage to increase as the base voltage is increased and thereby prevent the parasitic bipolar transistor from becoming conductive.
Inventors:
Chemka, Vishnu Kay.
Bose, Amitaba
Perth Salacy, Vijay
Chu, Longua
Bose, Amitaba
Perth Salacy, Vijay
Chu, Longua
Application Number:
JP2007510747A
Publication Date:
December 06, 2007
Filing Date:
April 06, 2005
Export Citation:
Assignee:
Freescale Semiconductor, Inc.
International Classes:
H01L21/8234; H01L27/06; H01L27/07; H01L29/08; H01L29/78; H01L31/113; H01L29/423
Attorney, Agent or Firm:
Mamoru Kuwagaki