Title:
HIGH-DENSITY, INDIVIDUALLY-ADDRESSABLE SURFACE- LIGHT-EMITTING SEMICONDUCTOR LASER/LIGHT EMITTING DIODE ARRAY
Document Type and Number:
Japanese Patent JPH04294591
Kind Code:
A
Abstract:
PURPOSE: To provide means of individually addressing lasers or light-emitting diode elements in a high-density array. CONSTITUTION: A high-density surface light-emitting semiconductor LED array includes diffused regions 24 extending through a terminal layer, a second forbidden band layer 18 and an active layer 16, partly extending through a first forbidden band layer 14 with optical cavities 36 formed between the diffused regions. A current is injected to terminals on a substrate from independent terminals 30 on terminal layers arranged on diffused layers through the optical cavities 36, so as to cause a light emission through the terminal layer surfaces in the optical cavities and the same window. A first forbidden band layer may be substituted by DBR to form an expanded LED array. Both forbidden band layers may be substituted by DBR to form a laser array. The first forbidden band layer is substituted by a dispersion-type Bragg reflector(DBR) with a dielectric reflective stack formed on the terminal layer for forming a laser array.
Inventors:
ROBAATO ERU SOONTON
Application Number:
JP34362791A
Publication Date:
October 19, 1992
Filing Date:
December 25, 1991
Export Citation:
Assignee:
XEROX CORP
International Classes:
B41J2/45; H01L27/15; H01L33/00; H01S5/00; H01S5/42; (IPC1-7): H01L33/00; H01S3/18
Attorney, Agent or Firm:
Masu Kobori