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Title:
HIGH DENSITY SILICON NITRIDE
Document Type and Number:
Japanese Patent JPS60235769
Kind Code:
A
Abstract:
A pressureless sintering process is disclosed for producing silicon nitride bodies of near theoretical density from an admixture of silicon nitride and sintering aids of mixtures of lanthanum oxide and aluminum oxide, lanthanum aluminate, and mixtures of lanthanum aluminate and aluminum oxide and mixtures of lanthanum aluminate and lanthanum oxide.

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JPS61201663MANUFACTURE OF FIBER TISSUE SILICON NITRIDE SINTERED BODY
JPS6256374SILICON NITRIDE BASE SINTERED BODY
Inventors:
MAATEIN IENGEN SHIE
Application Number:
JP9130885A
Publication Date:
November 22, 1985
Filing Date:
April 30, 1985
Export Citation:
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Assignee:
SYLVANIA ELECTRIC PROD
International Classes:
C04B35/584; (IPC1-7): C04B35/58
Domestic Patent References:
JPS4921091A1974-02-25
JPS523649A1977-01-12
JPS60186469A1985-09-21
Attorney, Agent or Firm:
Motohiro Kurauchi (1 outside)



 
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