Title:
HIGH DIELECTRIC CONSTANT CAPACITOR OF SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2988864
Kind Code:
B
Abstract:
PROBLEM TO BE SOLVED: To produce a capacitor of high dielectric constant at a single mask stage, by forming a side wall at the central part of the first insulation film and the second insulation film, and forming, by etching, continuously connection groove of downward on the side wall.
SOLUTION: On a substrate 20, the first insulation film 28 is formed, and on the first insulation film 28, the second insulation film 32 is formed. Then, at the central part of the first insulation film 28 and the second insulation film 32, a side wall 38 is formed. Then, a connection groove 40 of downward is formed by etching continuously on the side wall 38. On the side wall 38 and the connection groove 40, a TiN layer 42 and a Pt layer 44 of a capacitor first electrode are formed respectively. Then on the capacitor first electrode, a dielectric layer 50 is formed, and on the dielectric layer 50, a capacitor second electrode 52 is formed. Thus, a multi-layer type electrode including the Pt layer and the TiN layer is formed by etching with a single mask step at a time rather than etching them individually, so a manufacturing process is simplified.
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Inventors:
Lee, Chang-jae
Kim, Hwan Myeong
Kim, Hwan Myeong
Application Number:
JP1996000004122
Publication Date:
October 08, 1999
Filing Date:
January 12, 1996
Export Citation:
Assignee:
LG SEMICON CO LTD
International Classes:
H01L21/28; H01L21/02; H01L21/205; H01L21/768; H01L21/822; H01L21/8242; H01L27/04; H01L27/108; (IPC1-7): H01L27/108; H01L21/28; H01L21/822; H01L21/8242; H01L27/04