Title:
高周波増幅器及び周波数混合器
Document Type and Number:
Japanese Patent JP4149261
Kind Code:
B2
Abstract:
A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.
Inventors:
Eiji Taniguchi
Kenji Suematsu
Chiemi Sawami
Kenichi Maeda
Takayuki Ikushima
Hirotaka Kamima
Nao Takagi
Kenji Suematsu
Chiemi Sawami
Kenichi Maeda
Takayuki Ikushima
Hirotaka Kamima
Nao Takagi
Application Number:
JP2002546281A
Publication Date:
September 10, 2008
Filing Date:
May 17, 2001
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H03F3/19; H03D7/14; H03F1/02; H03F1/30; H03F1/32; H03F3/45; H03F3/72
Domestic Patent References:
| JP2000252766A | ||||
| JP2000196363A | ||||
| JP7154158A | ||||
| JP5283901A | ||||
| JP9260964A | ||||
| JP2001094360A |
Foreign References:
| US3984783 | ||||
| US5060294 |
Other References:
谷口英司 他6名,デュアルバイアスフィード形SiGeHBT線形低雑音増幅器,2001年電子情報通信学会総合大会講演論文集C-2-3,2001年 3月,p.50
Attorney, Agent or Firm:
Hideaki Tazawa
Konobu Kato
Hamada Hatsune
Konobu Kato
Hamada Hatsune