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Title:
HIGH-FREQUENCY AMPLIFIER
Document Type and Number:
Japanese Patent JP2013229660
Kind Code:
A
Abstract:

To provide a high-frequency amplifier capable of improving a stabilization index by attenuating an unnecessary frequency band without degrading an input or output impedance even when the input or output impedance of a transistor is originally low.

The high-frequency amplifier includes an electric field effect transistor 1 whose source terminal 1a is grounded, and a stabilization circuit 2 in which a first terminal 21 is connected with the gate terminal 1b of the electric field effect transistor 1. The stabilization circuit 2 includes a second capacitor 7 connected between a second terminal 52 and a third terminal 53 of a T-type attenuator circuit 5. The second terminal 52 and a third terminal 53 of the T-type attenuator circuit 5 are connected with the gate terminal 1b and the input terminal 3 of the electric field effect transistor 1, respectively.


Inventors:
INAGAKI RYUJI
TSURU MASAOMI
TANIGUCHI EIJI
Application Number:
JP2012098855A
Publication Date:
November 07, 2013
Filing Date:
April 24, 2012
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H03F1/12; H03F3/19; H03F3/21; H03F3/68
Attorney, Agent or Firm:
Hideaki Tazawa
Hamada Hatsune
Kume Teruyo
Hideo Kawamura