To provide a high frequency circuit device easy to produce without a decrease in substrate strength even though it has a thermal protection structure at a prescribed position of the substrate.
A second element 6 like a low-noise amplifying element with small power consumption and large characteristics change in temperature shift and a first element (power amplifying element) with a large power consumption as compared with the second element are mounted on an upper face of a substrate 1. A grounding electrode non-forming part 3 surrounding the mounting position of the second element 6 is provided on the lower face of the substrate 1. At the same time, an interior surrounded by the grounding electrode non-forming part 3 is formed as an inner grounding electrode 2i, and an exterior thereof is formed as an outer grounding electrode 2h. Then, the thermal conduction from the first element to the second element 6 is restricted by the grounding electrode non-forming unit 3.
| JPS60135037 | [Title of the device] The serge Abs-Ba unit for exchange 3 phases |
| JPS6030564 | [Title of the device] Terminal |
| JPS5976455 | HYBRID INTEGRATED CIRCUIT |
NAKAJI HIROYUKI
IMAMURA MITSUTOSHI
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