Title:
HIGH-FREQUENCY MICROSWITCH
Document Type and Number:
Japanese Patent JP2013143231
Kind Code:
A
Abstract:
To increase temperature fluctuation resistance of a high-frequency microswitch.
A first movable beam portion is formed in a silicon layer adhered partially to a silicon substrate through an insulating layer, and has a first signal wiring and a first electrical drive portion which are arranged in the longitudinal direction. A second movable beam portion is formed in the silicon layer, and has a second signal wiring and the first electric drive portion which are arranged in the longitudinal direction. The first movable beam portion and the second movable beam portion are disposed side by side at positions symmetrical to each other with either an axial symmetry or a rotational symmetry.
Inventors:
KATSUKI TAKASHI
NAKATANI TADASHI
SHIMAUCHI TAKEAKI
OKUDA HISAO
NAKATANI TADASHI
SHIMAUCHI TAKEAKI
OKUDA HISAO
Application Number:
JP2012002409A
Publication Date:
July 22, 2013
Filing Date:
January 10, 2012
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01H59/00; H01H57/00
Domestic Patent References:
| JP2005293918A | 2005-10-20 | |||
| JP2007149370A | 2007-06-14 | |||
| JP2000200533A | 2000-07-18 |
Foreign References:
| US20050225921A1 | 2005-10-13 |
Attorney, Agent or Firm:
Kenji Doi
Hayashi Tsunetoku
Manabe Kiyoshi
Shoji Kashiwaya
Koichi Watanabe
Hayashi Tsunetoku
Manabe Kiyoshi
Shoji Kashiwaya
Koichi Watanabe