To provide a high-frequency power supply which can supply high-frequency output higher than the conventional output without breakdown of an amplifier.
The high-frequency power supply comprises a junction temperature arithmetic unit 18 for calculating junction temperature of a semiconductor amplifying element of an amplifying unit; a first control unit 19 for reducing a DC power supply voltage supplied to an amplifying unit 12 from a DC power supply unit 13 until the junction temperature calculation value becomes equal to the junction temperature setting value, when the previously calculated junction temperature calculation value exceeds the preset junction temperature setting value, and realizing the control to keep the DC power supply voltage supplied to the amplifying unit 12 from the DC power supply unit 13 to the adequate value, when the junction temperature calculation value is less than the junction temperature setting value; and a second control unit for controlling an output of the amplifying unit 12 to approximate a high-frequency output supplied to a load from the amplifying unit to the high-frequency output setting value.
ITO HIROYUKI
TAKEI HIROTAKA
FUKUMOTO YOSHIKI
