Title:
高周波半導体装置
Document Type and Number:
Japanese Patent JP3586435
Kind Code:
B2
Abstract:
A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer provided therebetween. The ground plate and the power-supply conductor have a capacitance formed therebetween. Thus, the line conductor regards the power-supply conductor as having a potential identical to that of the ground plate. This makes it possible to lay out the line conductor without considering the arrangement of the power-supply conductor. In other words, by two-dimensionally overlapping a microstrip line and a power-supply conductor in an MMIC, the degree of freedom in the device layout can be increased.
Inventors:
Yutaka Earno
Osamu Baba
Yoshio Aoki
Muneharu Goto
Osamu Baba
Yoshio Aoki
Muneharu Goto
Application Number:
JP2001099955A
Publication Date:
November 10, 2004
Filing Date:
March 30, 2001
Export Citation:
Assignee:
Udina Device Co., Ltd.
International Classes:
H01L21/312; H01L21/318; H01L21/3205; H01L21/82; H01L21/822; H01L23/522; H01L23/52; H01L23/528; H01L27/04; (IPC1-7): H01L21/822; H01L21/312; H01L21/318; H01L21/3205; H01L21/82; H01L27/04
Domestic Patent References:
| JP5129803A | ||||
| JP7307567A | ||||
| JP10163703A | ||||
| JP63052466A | ||||
| JP2000208515A | ||||
| JP8162621A | ||||
| JP2000269429A |
Attorney, Agent or Firm:
Shuhei Katayama