Title:
HIGH FREQUENCY SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3460631
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enhance heat dissipation performance, matching of the coefficient of thermal expansion with a semiconductor chip, easiness of machining and light weight performance by composing a base substrate of composite material having a specified coefficient of thermal expansion, thermal conductivity of specified level or above, and Vickers hardness of a specified level or below.
SOLUTION: A base substrate 102 is composed of composite materials of Cu and Cu20 having a coefficient of thermal expansion of 15×10-6/°C, and thermal conductivity of 130 W/mk. A brazing material 113, e.g. solder, is applied onto the base substrate 102 and the electrode on the surface of a high frequency semiconductor chip 101 is connected with a terminal 104 through a wire 103. The terminal 104 is sealed of an insulating material 105, e.g. ceramics or glass, using brazing materials 110, 111. Furthermore, a frame 106 is jointed to a sealing material 107 through a brazing material 112 and then the sealing material 107 is welded to a cover 108 thus completing the high frequency semiconductor chip.
Inventors:
Ryuichi Saito
Yasuo Kondo
Yasuhisa Aono
Yasuo Kondo
Yasuhisa Aono
Application Number:
JP20867099A
Publication Date:
October 27, 2003
Filing Date:
July 23, 1999
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L23/02; (IPC1-7): H01L23/02
Domestic Patent References:
| JP7307422A | ||||
| JP5638467U | ||||
| JP63115228U |
Attorney, Agent or Firm:
Yasuo Sakuta
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