PURPOSE: To improve controllability in film forming and to make a 6 high quality film in a high frequency sputtering device.

CONSTITUTION: In a high frequency sputtering device for sputtering by applying high frequency wave between a substrate 5 and a target 8 and furthermore applying direct current bias 14 to at least one of the target 8 and the substrate 5, a controlling electrode 18 to a charged particle made incident on the substrate 5 is provided between the substrate 5 and the target 8, the wave of ≥100MHz is used as the high frequency 12 and a means 14A to apply negative bias to the controlling electrode 18 and a means 14C to control ion energy made incident on the substrate 5 by controlling substrate bias are provided.