To provide a high frequency surface acoustic wave device modulating its central frequency without changing line widths of an input transformation unit and an output transformation unit.

A high frequency surface acoustic wave device is disclosed. The disclosed high frequency surface acoustic wave device can modulate its central frequency easily, by changing the thickness of its nanocrystalline diamond layer. The disclosed high frequency surface acoustic wave device includes: a silicon substrate; a nanocrystalline diamond layer located above the silicon substrate; a piezoelectric layer formed on the surface of the nanocrystalline diamond layer; an input transformation unit; and an output transformation unit. The input transformation unit and the output transformation unit are formed in pairs on the surface or beneath of the piezoelectric layer. The thickness of the nanocrystalline diamond layer is preferably between 0.5 m and 20 m. The piezoelectric layer is preferably made of ZnO, AIN, or LiNbO3, wherein the thickness of the piezoelectric layer is between 0.5 to 5 m.