HIGH MOLECULAR COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD

Title:

HIGH MOLECULAR COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD

Document Type and Number:

Japanese Patent JP3876164

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a high molecular compound having excellent reactivity, inflexibility and adhesion to a substrate and less liable to swell in development and a resist material using the high molecular compound as a base resin and having much higher resolution and etching resistance than conventional resist materials and to provide a pattern forming method using the resist material.
SOLUTION: The new high molecular compound contains repeating units of formula (1-1) or (1-2) and has a weight average molecular weight of 1,000 to 500,000.

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Inventors:

Tsunehiro Nishi
Koji Hasegawa
Mutsuko Nakajima

Application Number:

JP2002008244A

Publication Date:

January 31, 2007

Filing Date:

January 17, 2002

Export Citation:

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Assignee:

Shin-Etsu Chemical Co., Ltd.

International Classes:

C08F32/08; G03F7/039; C08F220/08; C08F220/18; C08F222/06; C08F222/40; C08F232/00; C08F232/08; C08G61/08; H01L21/027; (IPC1-7): G03F7/039; C08F220/18; C08F222/06; C08F222/40; C08F232/00; C08G61/08; H01L21/027

Attorney, Agent or Firm:

Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura

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