Title:
HIGH MOLECULAR COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3900246
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a resist material having small absorption at the wavelength of F2 excimer laser light for exposure and capable of easily forming a fine pattern perpendicular to a substrate.
SOLUTION: The high molecular compound has repeating units of formula (1) (where A is a divalent organic group and forms a 4-20C cyclic hydrocarbon group together with C atoms which bond at both ends of A, the cyclic hydrocarbon group may be a bridged cyclic group and may contain a heteroatom; R1-R3 are each H, F, a 1-4C alkyl or a 1-4C fluorinated alkyl, at least one of R1-R3 contains F; and R4 is an acid labile group). The resist material is sensitive to high energy beams and is excellent in sensitivity and resolution at ≤200 nm, particularly ≤170 nm wavelength and in plasma etching resistance.
Inventors:
Jun Hatakeyama
Toshiaki Takahashi
Jun Watanabe
Toshinobu Ishihara
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda
Toshiaki Takahashi
Jun Watanabe
Toshinobu Ishihara
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda
Application Number:
JP2001070208A
Publication Date:
April 04, 2007
Filing Date:
March 13, 2001
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
International Classes:
C08G77/24; G03F7/039; C08K5/00; C08L83/08; G03F7/075; G03F7/40; H01L21/027; (IPC1-7): G03F7/039; C08G77/24; C08K5/00; C08L83/08; G03F7/40; H01L21/027
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Foreign References:
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Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yuko Nishikawa
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