To provide a high output power amplifier in which occurrence of current increase or high frequency characteristic deterioration caused by worsened heat radiation by cambering of a main substrate is suppressed and characteristics of a semiconductor can be derived to a maximum.
In a high output power amplifier 20 of the present invention, a small-sized substrate 11 for matching on which double or single laminated copper coating layers 21, 22 are provided and which is provided with a screw hole 23 is mounted while being pressed onto a main substrate 4 by a screw 12 between semiconductor signal lines of Push-Pull configuration. Consequently, prevention of cambering of the main substrate 4 and formation of a matching circuit just close to the semiconductor are made compatible.
| JPS53126247 | BTL AMPLIFIER CIRCUIT |
FUJIWARA SEIJI
SUMIYOSHI TAKASHI
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada