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Title:
HIGH-POLYMER COMPOUND, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, PRODUCTION OF RELIEF PATTERN AND ELECTRONIC PARTS
Document Type and Number:
Japanese Patent JP2000284480
Kind Code:
A
Abstract:

To make it possible to form patterns having good resolution by i ray exposure by using a high-polymer compound having a specific structural unit, thereby obtaining the photosensitive resin composition of a negative type or position type which attains the compatibility of good i ray permeability with low expandability and is useful as a material for the surface protective films and interlayer insulating films of semiconductor devices, etc., of low residual stress.

The high-polymer compound having the structural unit expressed by formula is provided. In the formula, Z is the group selected from -O-, -CO-, -Si(CH3)2-, -Si(OCH3)2-, -C(CH3)2-, -C(OCF3)2-, -C(OCH3)(CF3)-, -C(OCH3)2-, -C(OCF3)2- and -C(OCH3)(OCF3)-. and R and R' are respectively independently univalent groups and are the groups capable of constituting a ring together with Z by adding or condensing each other by light or heat. The high-polymer compound in which R and R' are both OH is provided.


Inventors:
SASAKI AKIHIRO
Application Number:
JP8866699A
Publication Date:
October 13, 2000
Filing Date:
March 30, 1999
Export Citation:
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Assignee:
HITACHI CHEM DUPONT MICROSYS
International Classes:
H01L21/027; C08G73/10; C08G73/22; G03F7/004; G03F7/022; G03F7/027; G03F7/028; G03F7/037; G03F7/038; G03F7/40; H01L21/312; (IPC1-7): G03F7/037; C08G73/10; C08G73/22; G03F7/004; G03F7/022; G03F7/027; G03F7/028; G03F7/038; G03F7/40; H01L21/027; H01L21/312
Domestic Patent References:
JPH1180354A1999-03-26
JPH10324745A1998-12-08
JPH1060067A1998-03-03
JPH06343880A1994-12-20
JP2000143804A2000-05-26
JPH10326011A1998-12-08
Foreign References:
WO1998050371A11998-11-12
Attorney, Agent or Firm:
Yukihiko Takada (1 outside)