Title:
HIGH-PURITY 2,2-DIFLUOROBUTANE
Document Type and Number:
Japanese Patent JP2014185111
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a high-purity 2,2-difluorobutane suitable as a gas for plasma reactions targeting semiconductors.SOLUTION: A high-purity 2,2-difluorobutane suitable as a gas for plasma reactions can be acquired past a rectifying step of purifying a crude 2,2-difluorobutane included within a crude reaction product until the purity thereof and combined contents of fluorobutenes and 2-butyne therein become 99.9 vol.% or above and 800 vol.ppm or below, respectively, a step of removing water from the purified product based on the contact thereof with an adsorbent, and a step of abating, by simple-distilling the 2,2-difluorobutane, nitrogen and oxygen concentrations within the 2,2-difluorobutane to 100 vol.ppm or below and 50 vol.ppm or below, respectively.
Inventors:
SUGIMOTO TATSUYA
Application Number:
JP2013061453A
Publication Date:
October 02, 2014
Filing Date:
March 25, 2013
Export Citation:
Assignee:
NIPPON ZEON CO
International Classes:
C07C19/08; C09K13/08
Domestic Patent References:
| JPH05255143A | 1993-10-05 | |||
| JPH08198784A | 1996-08-06 | |||
| JP2012144473A | 2012-08-02 |
Foreign References:
| WO2012133401A1 | 2012-10-04 | |||
| WO2009123038A1 | 2009-10-08 |
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