Title:
HIGH PURITY COPPER SPUTTERING TARGET AND THIN COATING
Document Type and Number:
Japanese Patent JP3403918
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a copper target for sputtering capable of forming wiring coating having low electric resistance indispensable to a high speed arithmetic element and furthermore excellent in the uniformity of coating thickness and to provide copper thin coating.
SOLUTION: This high purity copper sputtering target is the one in which the contents of Na and K are respectively regulated to ≤0.1 ppm, the contents of Fe, Ni, Cr, Al, Ca and Mg are respectively regulated to ≤1 ppm, the contents of carbon and oxygen are respectively regulated to ≤5 ppm, the contents of U and Th are respectively regulated to ≤1 ppb, and the content of copper other than gaseous components is regulated to ≥99.999%. Furthermore, it is preferable that the average particle size in the sputtering face is regulated to ≤250 μm, the dispersion of the average particle size in every place is regulated to ±20%, the X-ray diffraction intensity ratio I(111)/I(200) is regulated to ≥2.4 in the sputtering face, and the dispersion thereof is regulated to ±20%.
Inventors:
Kazunari Takahashi
Osamu Kano
Osamu Kano
Application Number:
JP15733197A
Publication Date:
May 06, 2003
Filing Date:
June 02, 1997
Export Citation:
Assignee:
Japan Energy Co., Ltd.
International Classes:
C23C14/14; C23C14/18; C23C14/34; H01L21/285; (IPC1-7): C23C14/34; C23C14/14
Domestic Patent References:
| JP1060632A | ||||
| JP107491A | ||||
| JP108244A | ||||
| JP10195611A |
Attorney, Agent or Firm:
Isamu Kogoshi
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