Title:
遠紫外高輝度発光する高純度六方晶窒化ホウ素単結晶粉末とその製造方法
Document Type and Number:
Japanese Patent JP4859173
Kind Code:
B2
Abstract:
While high-purity hexagonal boron nitride monocrystal (hBN) obtained by way of a high temperature/high-pressure treatment in the presence of a high-purity solvent has excellent properties in terms of far-UV luminescence characteristics, it has drawbacks including that it can be easily adversely affected by mechanical vibrations and impetus, that monocrystal shows a poor morphological retentiveness and that the luminescence characteristics fluctuate to shift the selected and set wavelength. The present invention can overcome the drawbacks of being easily affected by vibrations and showing a poor morphological retentiveness by grinding down the monocrystal obtained by a solvent/refining process into powder and applying the powder to a light emitting surface. Thus, the present invention provides crystal powder to be used for a far-UV luminescence device showing excellent luminescence characteristics that are stable and do not fluctuate.
Inventors:
Kenji Watanabe
Nao Taniguchi
Hisao Kanda
Nao Taniguchi
Hisao Kanda
Application Number:
JP2005193358A
Publication Date:
January 25, 2012
Filing Date:
July 01, 2005
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
C30B29/38; C09K11/00; C09K11/08; C09K11/63; G01T1/20; G01T1/202; G01T3/06
Domestic Patent References:
| JP11060394A | ||||
| JP2004035301A | ||||
| JP2005075656A | ||||
| JP2006079873A |
Foreign References:
| WO2005049898A1 |
Other References:
Takeshi TANIGUCHI, et al.,High pressure synthesis of UV-light emitting cubic boron nitride single crystals,Diamond and Related Materials,2003, Vol.12,pp.1098-1102
K.P. ANANTHANARAYANAN, et al.,Boron compounds for thermal-neutron detection,Nuclear Instruments and Methods,1 June 1974, Vol.118, No.1,pp.45-48
K.P. ANANTHANARAYANAN, et al.,Boron compounds for thermal-neutron detection,Nuclear Instruments and Methods,1 June 1974, Vol.118, No.1,pp.45-48