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Title:
HIGH-PURITY METALLIC MATERIAL
Document Type and Number:
Japanese Patent JP3228660
Kind Code:
B2
Abstract:

PURPOSE: To produce a high-purity metallic material by which a joint leak, etc., are prevented when the electrode and contact of a highly integrated semiconductor device are formed and further by which the function of a barrier layer is not deteriorated when the layer is formed.
CONSTITUTION: This high-purity metallic material consists of one kind of metal selected from Ti, Zr and Hf. The high-purity metallic materials contain ≤10ppm each of Fe, Ni and Cr elements, 10ppm Al, ≤250ppm oxygen and ≤0.1ppm each of Na and K. Such a high-purity metallic material is obtained, for example, by refining a crude metallic material with an iodide decomposition process or removing the contaminant layer on the surface and then melting the material in vacuum with an electron beam.


Inventors:
Takashi Ishigami
Mitsuo Kawai
Minoru Obata
Michio Sato
Hisashi Yamanobe
Toshihiro Maki
Shigeru Ando
Noriaki Yagi
Application Number:
JP18514195A
Publication Date:
November 12, 2001
Filing Date:
July 21, 1995
Export Citation:
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Assignee:
Toshiba Corporation
International Classes:
C22B34/12; C22B34/14; C22C14/00; C22C16/00; C22C28/00; C23C14/34; H01L21/285; H01L21/3205; H01L23/52; (IPC1-7): C22B34/12; C22B34/14; C23C14/34; H01L21/285; H01L21/3205
Domestic Patent References:
JP2213490A
JP3177594A
Attorney, Agent or Firm:
Saichi Suyama