Title:
HIGH-PURITY METALLIC MATERIAL
Document Type and Number:
Japanese Patent JP3228660
Kind Code:
B2
Abstract:
PURPOSE: To produce a high-purity metallic material by which a joint leak, etc., are prevented when the electrode and contact of a highly integrated semiconductor device are formed and further by which the function of a barrier layer is not deteriorated when the layer is formed.
CONSTITUTION: This high-purity metallic material consists of one kind of metal selected from Ti, Zr and Hf. The high-purity metallic materials contain ≤10ppm each of Fe, Ni and Cr elements, 10ppm Al, ≤250ppm oxygen and ≤0.1ppm each of Na and K. Such a high-purity metallic material is obtained, for example, by refining a crude metallic material with an iodide decomposition process or removing the contaminant layer on the surface and then melting the material in vacuum with an electron beam.
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Inventors:
Takashi Ishigami
Mitsuo Kawai
Minoru Obata
Michio Sato
Hisashi Yamanobe
Toshihiro Maki
Shigeru Ando
Noriaki Yagi
Mitsuo Kawai
Minoru Obata
Michio Sato
Hisashi Yamanobe
Toshihiro Maki
Shigeru Ando
Noriaki Yagi
Application Number:
JP18514195A
Publication Date:
November 12, 2001
Filing Date:
July 21, 1995
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C22B34/12; C22B34/14; C22C14/00; C22C16/00; C22C28/00; C23C14/34; H01L21/285; H01L21/3205; H01L23/52; (IPC1-7): C22B34/12; C22B34/14; C23C14/34; H01L21/285; H01L21/3205
Domestic Patent References:
JP2213490A | ||||
JP3177594A |
Attorney, Agent or Firm:
Saichi Suyama