To obtain high purity zirconium in which the content of impurities other than gas components, such as oxygen and carbon, is made to <100 ppm.

After the removal of the substances adhering to the surface of a 2N to 2N level zirconium or hafnium sponge material by using a mixture of hydrofluoric acid and nitric acid, the sponge material is wrapped with foil of a volatile element, such as Al, Zn, Cu and Mg, and formed into compact material. By applying electron beam melting while introducing the compact material into an electron beam melting furnace, the above high purity zirconium or hafnium can be manufactured.