To provide a method for polishing with a polishing pad for an increase in wafer yield by increasing removal rate to increase throughput.
A substrate is fixed to a carrier fixture having a channel-free surface. The method includes a process of fixing the substrate to the carrier fixture with the channel-free surface adjacent and parallel to a polishing surface of the polishing pad. The polishing pad has multiple grooves with high-rate paths. The method includes a process of applying a polishing medium to the polishing pad adjacent to the carrier fixture, and a process of polishing the substrate with the polishing pad and the polishing medium by rotating the polishing pad and the carrier fixture, wherein the channel-free surface of the carrier fixture is pressed by the polishing pad to prevent the flow of the polishing medium to the substrate, and the high-rate groove paths cross the carrier fixture to promote the flow of the polishing medium to the substrate.
COPYRIGHT: (C)2010,JPO&INPIT
Yasuo Yanagibashi