Title:
HIGH RESISTIVITY SILICON WAFER AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2011054656
Kind Code:
A
Abstract:
To allow a region where p/n-type inversion is caused to be formed in a depth range deeper than before.
A silicon wafer is a p-type wafer, which is doped with nitrogen, and has a p-type surface region of 0.1 to 10 kΩcm in resistance distribution in a depth direction from a surface, a peak region increasing and decreasing in resistance value in the depth direction to have a peak, and a p/n-type inversion depth region by an oxygen donor through a heat treatment of 1100 to 1250°C in processing temperature and 1 to 5 hours in processing time in an atmosphere of an argon gas, a hydrogen gas, or a mixed gas thereof, the peak position in the peak region being within a depth range of 10 to 70 μm from the wafer surface.
Inventors:
KURITA KAZUNARI
Application Number:
JP2009200420A
Publication Date:
March 17, 2011
Filing Date:
August 31, 2009
Export Citation:
Assignee:
SUMCO CORP
International Classes:
H01L21/322; C30B15/04; C30B29/06; C30B33/00; H01L21/324
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Yasuhiko Murayama
Tadashi Takahashi
Yasuhiko Murayama