Title:
HIGH SENSITIVITY PHOTORESIST COMPOSITION CONTAINING SOLUBLE FILM FORMING DENDRIMER AND PATTERN FORMING METHOD USING THE SAME
Document Type and Number:
Japanese Patent JP2002049152
Kind Code:
A
Abstract:
To provide a high sensitivity and high resolution photoresist composition developable with an organic solvent for use in E(electron) beam lithography.
The composition includes a high sensitivity soluble film forming photoresist composition of a dendrimer calix [4] arene derivative of formula (1) and forms a lithographic pattern together with a crosslinker selected from glycoluril derivatives capable of reacting with such dendrimers under the action of an acid catalyst, a photo-acid generating agent and an organic solvent. The composition is particularly useful for forming a high resolution (<100 nm) negative type image.
Inventors:
AFZALI-ARKDAKANI ALI
TORISHIA LIN BREEN
GELORME JEFFREY D
DAVID BRIAN MITSUI
MICHAEL JOSEPH LUX
TORISHIA LIN BREEN
GELORME JEFFREY D
DAVID BRIAN MITSUI
MICHAEL JOSEPH LUX
Application Number:
JP2001164184A
Publication Date:
February 15, 2002
Filing Date:
May 31, 2001
Export Citation:
Assignee:
IBM
International Classes:
G03F7/038; H01L21/027; (IPC1-7): G03F7/038; H01L21/027
Attorney, Agent or Firm:
Hiroshi Sakaguchi (2 outside)