PURPOSE: To obtain a SIThy having structure enabling high-speed switching by forming a region, in which the life of charged carriers is short, to a specific section in a thin film region.
CONSTITUTION: A junction on the anode side of a SIThy is acquired easily by conducting continuous vapor-phase epitaxial growth controlling impurity density to a P-type silicon substrate having impurity density of 1×1019cm-3. An N+ cathode region 31 and a P+ gate region 33 shaped to the surface oppositely faced to a P+ anode 32 are obtained by selectively diffusing phosphorus or arsenic to the N+ cathode region 31 and boron to the P+ gate region 33. A feature at that time is that a region 36 in which the life of charged carriers is short is shaped into an N layer 35. The region 36 can be formed at a predetermined position in the N layer 35 by controlling the energy of the region 36 through radiation exposure such as proton-rays exposure, and the extent of the shortening of the life of charged carriers can be selected by the exposure of proton-rays and an annealing process after irradiation.
NAKAMURA YOSHIO
KUSHIDA TOMOYOSHI
| JPS5522840A | 1980-02-18 | |||
| JPS5739577A | 1982-03-04 | |||
| JPS52113686A | 1977-09-22 | |||
| JPS6074443A | 1985-04-26 |
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