HIGH SPEED MAGNETIC RANDOM ACCESS MEMORY-BASED TERNARY CONTENT-ADDRESSABLE MEMORY

Title:

HIGH SPEED MAGNETIC RANDOM ACCESS MEMORY-BASED TERNARY CONTENT-ADDRESSABLE MEMORY

Document Type and Number:

Japanese Patent JP2013164893

Kind Code:

A

Abstract:

To provide a self-referenced magnetic random access memory-based ternary content-addressable memory (MRAM-based TCAM) cell.

The MRAM-based TCAM cell comprises a first and a second magnetic tunnel junction; a first and a second conductive strap adapted to pass a heating current in the first and second magnetic tunnel junctions; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write first write data into the first magnetic tunnel junction; and a second current line for passing a write current to selectively write second write data into the second magnetic tunnel junction, such that three distinct cell logic states can be written into the MRAM-based TCAM cell.

Inventors:

JEREMY ALVAREZ-HERAULT
YANN CONRAUX
LUCIEN LOMBARD

Application Number:

JP2013022579A

Publication Date:

August 22, 2013

Filing Date:

February 07, 2013

Export Citation:

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Assignee:

CROCUS TECHNOLOGY SA

International Classes:

G11C15/04; G11C11/15; H01L21/8246; H01L27/105; H01L43/08

Domestic Patent References:

JP2011014228A	2011-01-20
JP2010113795A	2010-05-20
JP2010506341A	2010-02-25

Foreign References:

US20110002151A1	2011-01-06
WO2008040561A2	2008-04-10
US20100110744A1	2010-05-06
US20140273284A1	2014-09-18
US20150287764A1	2015-10-08
US20150325279A1	2015-11-12

Attorney, Agent or Firm:

Mitsufumi Esaki
Blacksmith
Kiyota Eisho

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