HIGH SPEED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Title:

HIGH SPEED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JP3149037

Kind Code:

B2

Abstract:

PURPOSE: To improve rapid operativity by realizing a narrow region for injecting one dimensional carrier beyond limitations by lithography technique and by accordingly enabling traveling of carrier which gets near a quantum fine line.
CONSTITUTION: Injection and traveling of carrier are made one dimension by providing an n-GaAs anode layer 2, an RTB layer 3, an n-GaAs cathode layer 4 which is a carrier injection layer and a WSi depleting electrode 8 which is applied to a side in the n-GaAs cathode layer 4 and generates a Schottky junction together with the n-GaAs cathode layer 4 to enlarge a depletion layer 9 inside the n-GaAs cathode layer 4.

Inventors:

Kenichi Imamura

Application Number:

JP4276892A

Publication Date:

March 26, 2001

Filing Date:

February 28, 1992

Export Citation:

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Assignee:

富士通株式会社

International Classes:

H01L29/68; H01L29/06; H01L29/205; (IPC1-7): H01L29/68

Domestic Patent References:

JP590573A

Attorney, Agent or Firm:

Shoji Kashiwaya (1 person outside)

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