HIGH-TEMPERATURE ELECTRODE AND BARRIER STRUCTURE USED FOR FRAM AND DRAM

Title:

HIGH-TEMPERATURE ELECTRODE AND BARRIER STRUCTURE USED FOR FRAM AND DRAM

Document Type and Number:

Japanese Patent JP2002198324

Kind Code:

A

Abstract:

To provide a semiconductor structure capable of enduring an annealing at a high temperature without damaging conductivity and perfection.

The semiconductor structure includes a substrate selected among substrates of a group of silicon, polysilicon, silicon dioxide, and silicon germanium, and an electrode located on the substrate. The electrode contains a layer of a composition of Ir-M-O. Where, M is a metal selected from among metals of a group of Ta, Ti, Nb, Al, Hf, Zr, and V. The semiconductor structure is constructed and arranged so as to endure the annealing at a temperature of 600°C or more without damaging conductivity and perfection.

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Inventors:

ZHANG FENGYAN
SHIEN TEN SUU
HON IN

Application Number:

JP2001339963A

Publication Date:

July 12, 2002

Filing Date:

November 05, 2001

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L21/28; H01L21/02; H01L21/283; H01L21/3205; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; H01L29/49; (IPC1-7): H01L21/28; H01L21/8242; H01L27/105; H01L27/108

Domestic Patent References:

JP2000260958A	2000-09-22
JP2000223666A	2000-08-11

Attorney, Agent or Firm:

Shusaku Yamamoto

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