HIGH-TEMPERATURE HIGH-PRESSURE TREATING DEVICE FOR SUBSTRATE TO BE TREATED

Japanese Patent JP3445148

B2

PROBLEM TO BE SOLVED: To prevent the occurrence of dust, oxidation, etc., when a substrate to be treated is treated in a high-temperature high-pressure inert gas atmosphere by housing a stocking means which stock substrates to be treated and a carrying means which carries the substrates in an airtight enclosure together with a pressure vessel.
SOLUTION: A stocking means 2 which stocks substrates 1 to be treated and a carrying means 5 which carries the substrates 1 stocked in the stocking means 2 in and out of the treating chamber 4 of a pressure vessel 3 are housed in an airtight enclosure 6 together with the vessel 3. The substrates 1 are semiconductor substrates, such as Si wafers, etc. The enclosure 6 is formed in a box-shaped housing chamber 10 by mounting airtight external supporting members 9 on a frame 9. A door 11 of a sliding type, biparting type, etc., is provided between a load port 7 and the stocking means 2 and the substrate 1 to be treated in the load port 7 can be housed on the stocking means 2 through the opening/closing of the door 11.

Takao Fujikawa
Takahiko Ishii
Hiroshi Narikawa
Makoto Monguchi

JP13984198A

September 08, 2003

May 21, 1998

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KABUSHIKI KAISHA KOBE SEIKO SHO

B01J3/02; C23C14/58; H01L21/3205; H01L21/677; H01L21/68; (IPC1-7): H01L21/3205; B01J3/02; H01L21/68

JP1092820A
JP8330424A
JP11288937A
JP870028A
JP4234119A
JP2130925A
JP9289173A
JP4110724U

Toshio Yasuda

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