To prevent the start of a high side output from being disabled by providing an N channel MOS transistor, which drives its gate with the same phase as a second output switch element based on a second driving control signal while connecting its drain and its source in parallel, between the collector and emitter of the second output switch element.

The drain and source are connected in parallel between the collector and emitter of a low side output IGBT 20. Then, the gate is driven with the same phase as the low side output IGBT 20 based on second IGBT driving control signal LIN, and an N channel MOS transistor 21 having the same high voltage resistance as the low side output IGBT 20 and an MOS transistor driving circuit 22 for driving the gate of the N channel MOS transistor 21 corresponding to the second IGBT driving control signal LIN are provided. Thus, the component of a loss lowering the charging voltage of a capacitor for both trap at the time of starting a high voltage resistant power integrated circuit rather than a power supply voltage VCC of a control system can be reduced.