Title:
降伏電圧を高めた高電圧半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP7246482
Kind Code:
B2
Abstract:
High voltage semiconductor device is disclosed. The high voltage semiconductor device includes a semiconductor substrate, a gate structure on the semiconductor substrate, at least one first isolation structure, and at least on first drift region. The first isolation structure and the first drift region are disposed in the semiconductor substrate at a side of the gate structure. The first isolation structure vertically penetrates through the first drift region.
Inventors:
Sun Chao
Application Number:
JP2021530775A
Publication Date:
March 27, 2023
Filing Date:
February 28, 2019
Export Citation:
Assignee:
Yangtze Memory Technologies Co.,Ltd.
International Classes:
H01L21/336; H01L29/78
Domestic Patent References:
| JP2008140922A | ||||
| JP2009260208A |
Foreign References:
| US20140339650 | ||||
| US20090014815 |
Attorney, Agent or Firm:
Hiroi Arai
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