To provide a method for forming a uniform germanium-doped silicon conductive film on a substrate by a coating method under ordinary pressure, and to provide a method for producing a phosphorus atom-containing higher order silane compound therefor.
A method for producing a germanium atom-containing higher order silane compound comprises irradiating a solution containing a photopolymerizable silane compound and a germanium compound with a ray having a longer wavelength than 400 nm to form the germanium atom-containing higher order silane compound. A method for forming a germanium-containing silicon film comprises coating the solution containing the germanium atom-containing higher order silane compound obtained by the above method on a substrate and heat-treating the coated substrate.
MATSUKI YASUO
O DOUKAI
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