HIGHLY ACCURATE, AS-PRESSURE CONTROLLED GAAS ANNEALING DEVICE

Japanese Patent JPS61252639

A

PURPOSE:To obtain a device, by which safe, high-quality products are obtained, by using a light emitting part end and a light receiving part end, which detect and determine As pressure based on the height of the light intensity peak of spectral rays having specified wavelengths, as light-guides, and connecting said ends to a light input part and a light output part. CONSTITUTION:The temperature of a GaAS wafer 11 is controlled by a heater 8 and annealing is carried out. At this time, metal As is put in a boat 5 in a nozzle part 4 of a quartz tube. An inactive gas or N2 gas is made to flow through a carrier gas introducing port 2. As vapor, which is yielded by the temperature control of a heater 7, is used as a carrier gas (a). As pressure is applied on the GaAs wafer 11. As an As pressure monitor, a monitor comprising a light emitting part 9 and a light receiving part 10 is provided, and the As pressure in a furnace is measured. The light emitting part 9 emits spectral rays having wavelengths of 215nm and 255nm. The light receiving part 10 receives the spectral rays and measures the absorption of the rays into the gaseous As when the spectral rays pass the inside of the furnace 1. The signal of the measured value is sent to a CPU 16, and an As controlling heater 7 is controlled. Lightguides 17 are used for connecting the light emitting part and the light receiving part to the heating furnace 1.

JP7304768	Heat treatment equipment and method for cleaning heat treatment equipment
WO/2021/171935	HEAT TREATMENT METHOD
JPS61289673	COMPOUND SEMICONDUCTOR DEVICE

OSAKA HAJIME

JP9356785A

November 10, 1986

May 02, 1985

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SUMITOMO ELECTRIC INDUSTRIES

H01L21/26; H01L21/324; (IPC1-7): H01L21/26

Akira Uchida

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